The OnePlus 12 is gearing up for its launch in China on December 5, and we’ve got some juicy leaks about its specs, design, camera and more. The latest buzz is about the AnTuTu score, where the OnePlus flagship, powered by Snapdragon 8 Gen 3 with a whopping 24GB RAM and 1TB storage, achieved a groundbreaking overall score of 2,333,033 points. This sets a new record for the highest AnTuTu score to date.

If you care about perfomance and you choose your devices by focusing on chipset performance, then our dedicated Mobile Phone Comparison tool will help you because it not only compare most of the specs, but also which phone has a more powerfull chipset. Least but not last, if you are a fan, don’t miss to visit the OnePlus Comparison page.

Oneplus 12 antutu

The CPU impressively secured 533.566 points, the GPU showcased its power with 904,961 points, the UX category earned 355,995 points, and the memory test delivered a strong 538,511 points. Beyond its top-notch chipset, massive RAM, and storage, the OnePlus 12 boasts a larger vapor chamber. This enhancement plays a crucial role in superior heat dissipation, ensuring optimal performance during demanding tasks, such as rigorous AnTuTu tests.

Adding to the excitement, OnePlus officially announced wireless charging support for the upcoming OnePlus 12. They conducted a water jet test, simulating rain, highlighting the improved touch controls on the new screen compared to an iPhone 15 Pro. However, it’s worth noting that the OnePlus 12 won’t come with IP68 certification.

Furthermore, OnePlus is doubling down on delivering an outstanding gaming experience. The company has forged partnerships with game developers, manufacturers, and chipmakers to fine-tune gaming performance specifically for the OnePlus 12.

Following its debut in China, the OnePlus 12 is set to make its global debut on January 23. Anticipate not only the OnePlus 12 but also the expected arrival of the OnePlus 12R, promising a comprehensive global release.

Leave a Reply

Your email address will not be published. Required fields are marked *